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| Transys Electronics LIMITED TO-92S Plastic-Encapsulated Transistors 2SA933AS TRANSISTOR (PNP) TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PCM : 0.2 W (Tamb=25) Collector current I CM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat unless otherwise specified) Test conditions MIN -60 -50 -6 -0.1 -0.1 120 560 -0.5 V TYP MAX UNIT V V V A A Ic= -50A , IE=0 IC= -1 mA , IB=0 IE=- 50A, IC=0 VCB=-60V, IE=0 VEB= -6V, IC=0 VCE=-6 V, IC= -0.1A IC= -50mA, IB=-5mA VCE=-12V, IC=-2mA Transition frequency fT F=30MHz 120 MHz CLASSIFICATION OF hFE Rank Range Q 120-270 R 180-390 S 270-560 |
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